DMN601DMK-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.51A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 510mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-26
Part Status: Active
Description: MOSFET 2N-CH 60V 0.51A SOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 510mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-26
Part Status: Active
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN601DMK-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.51A SOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 510mA, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-26, Part Status: Active.
Weitere Produktangebote DMN601DMK-7 nach Preis ab 0.15 EUR bis 1.02 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN601DMK-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 0.51A 6-Pin SOT-26 T/R |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601DMK-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 0.51A 6-Pin SOT-26 T/R |
auf Bestellung 2475 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601DMK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.51A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 510mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.304nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-26 Part Status: Active |
auf Bestellung 120797 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN601DMK-7 | Hersteller : Diodes Incorporated | MOSFET Dual N-Channel |
auf Bestellung 16324 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN601DMK-7 Produktcode: 144828 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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DMN601DMK-7 | Hersteller : Diodes Zetex | Trans MOSFET N-CH 60V 0.51A 6-Pin SOT-26 T/R |
Produkt ist nicht verfügbar |
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DMN601DMK-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 470mA Pulsed drain current: 0.85A Power dissipation: 0.98W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 304pC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN601DMK-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 470mA; Idm: 0.85A; 980mW; SOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 470mA Pulsed drain current: 0.85A Power dissipation: 0.98W Case: SOT26 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 304pC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |