DMN601DWK-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
| 15000+ | 0.19 EUR |
| 21000+ | 0.18 EUR |
| 30000+ | 0.17 EUR |
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Technische Details DMN601DWK-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 305mA, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote DMN601DWK-7 nach Preis ab 0.084 EUR bis 1 EUR
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DMN601DWK-7 | Diodes Incorporated |
MOSFETs Dual N-Channel |
auf Bestellung 48706 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN601DWK-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.305A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 405236 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN601DWK-7 |
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Hersteller: Diodes Incorporated
MOSFETs Dual N-Channel
MOSFETs Dual N-Channel
auf Bestellung 48706 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.55 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.099 EUR |
| 6000+ | 0.084 EUR |
| DMN601DWK-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
Description: MOSFET 2N-CH 60V 0.305A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 405236 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 29+ | 0.62 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |