DMN601TK-7 Diodes Incorporated


ds30654.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 300MA SOT-523
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
15000+0.13 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN601TK-7 Diodes Incorporated

Description: MOSFET N-CH 60V 300MA SOT-523, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: SOT-523, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V.

Weitere Produktangebote DMN601TK-7 nach Preis ab 0.14 EUR bis 0.58 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMN601TK-7 DMN601TK-7 Diodes Incorporated DMN601TK.pdf MOSFETs N-Channel
auf Bestellung 18986 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.41 EUR
11+0.27 EUR
100+0.18 EUR
3000+0.14 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN601TK-7 DMN601TK-7 Diodes Incorporated ds30654.pdf Description: MOSFET N-CH 60V 300MA SOT-523
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
auf Bestellung 25347 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
44+0.4 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN601TK-7 DMN601TK.pdf
Hersteller: Diodes Incorporated
MOSFETs N-Channel
auf Bestellung 18986 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+0.41 EUR
11+0.27 EUR
100+0.18 EUR
3000+0.14 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN601TK-7 ds30654.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 300MA SOT-523
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
auf Bestellung 25347 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
31+0.58 EUR
44+0.4 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH