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DMN6040SK3Q-13

DMN6040SK3Q-13 Diodes Incorporated


DMN6040SK3Q.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 41V-60V TO252 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V
auf Bestellung 5000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.52 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN6040SK3Q-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V-60V TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 20A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252, (D-Pak), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1287 pF @ 25 V.

Weitere Produktangebote DMN6040SK3Q-13 nach Preis ab 0.42 EUR bis 1.98 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN6040SK3Q-13 DMN6040SK3Q-13 Hersteller : Diodes Incorporated DMN6040SK3Q.pdf MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 2490 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
27+1.98 EUR
30+ 1.75 EUR
100+ 1.19 EUR
500+ 1 EUR
1000+ 0.85 EUR
2500+ 0.75 EUR
Mindestbestellmenge: 27
DMN6040SK3Q-13 Hersteller : Diodes Zetex dmn6040sk3q.pdf High Enhancement Mode MOSFET Automotive AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.42 EUR
Mindestbestellmenge: 2500
DMN6040SK3Q-13 Hersteller : Diodes Inc dmn6040sk3q.pdf High Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMN6040SK3Q-13 Hersteller : Diodes Zetex dmn6040sk3q.pdf High Enhancement Mode MOSFET Automotive AEC-Q101
Produkt ist nicht verfügbar
DMN6040SK3Q-13 Hersteller : DIODES INCORPORATED DMN6040SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 30A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMN6040SK3Q-13 Hersteller : DIODES INCORPORATED DMN6040SK3Q.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 30A; 17W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 30A
Power dissipation: 17W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar