DMN6040SSD-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 5A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details DMN6040SSD-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 5A 8SO, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 5A, Drain to Source Voltage (Vdss): 60V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN6040SSD-13 nach Preis ab 0.28 EUR bis 1.32 EUR
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DMN6040SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Case: SO8 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A On-state resistance: 55mΩ Power dissipation: 0.8W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
auf Bestellung 324 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6040SSD-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K |
auf Bestellung 9806 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6040SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 5A 8SO Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V Current - Continuous Drain (Id) @ 25°C: 5A Drain to Source Voltage (Vdss): 60V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 4766 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN6040SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; 0.8W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SO8
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
On-state resistance: 55mΩ
Power dissipation: 0.8W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 324 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 173+ | 0.41 EUR |
| 232+ | 0.31 EUR |
| 248+ | 0.29 EUR |
| 260+ | 0.28 EUR |
| DMN6040SSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K
auf Bestellung 9806 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.94 EUR |
| 10+ | 0.61 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.32 EUR |
| 2500+ | 0.31 EUR |
| 5000+ | 0.29 EUR |
| DMN6040SSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 5A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 5A 8SO
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4766 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.32 EUR |
| 22+ | 0.82 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |