DMN6069SFG-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 5.6A POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 930mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.41 EUR |
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Technische Details DMN6069SFG-7 Diodes Incorporated
Description: MOSFET N-CH 60V 5.6A POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V, Power Dissipation (Max): 930mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V.
Weitere Produktangebote DMN6069SFG-7 nach Preis ab 0.46 EUR bis 1.57 EUR
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DMN6069SFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 5.6A POWERDI333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V Power Dissipation (Max): 930mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V |
auf Bestellung 38230 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6069SFG-7 | Hersteller : Diodes Incorporated |
MOSFET 60V N-Ch Enh FET 60Vgss 25A Idm |
auf Bestellung 3984 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMN6069SFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 25A Power dissipation: 2.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN6069SFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 25A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Pulsed drain current: 25A Power dissipation: 2.4W Case: PowerDI3333-8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |