Weitere Produktangebote DMN6070SFCL-7 nach Preis ab 0.23 EUR bis 1.02 EUR
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DMN6070SFCL-7 | Diodes Incorporated |
 Description: MOSFET N-CH 60V 3A X1-DFN1616-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V |
auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SFCL-7 | Diodes Incorporated |
MOSFETs N-Ch 31V to 99V 60V 120mOhm 606pF |
auf Bestellung 4610 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SFCL-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 3A X1-DFN1616-6 Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V |
auf Bestellung 56754 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN6070SFCL-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Description: MOSFET N-CH 60V 3A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.26 EUR |
| 9000+ | 0.25 EUR |
| 21000+ | 0.24 EUR |
| 30000+ | 0.23 EUR |
| DMN6070SFCL-7 |
|
Hersteller: Diodes Incorporated
MOSFETs N-Ch 31V to 99V 60V 120mOhm 606pF
MOSFETs N-Ch 31V to 99V 60V 120mOhm 606pF
auf Bestellung 4610 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.01 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.32 EUR |
| 6000+ | 0.26 EUR |
| DMN6070SFCL-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 3A X1-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
Description: MOSFET N-CH 60V 3A X1-DFN1616-6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.5A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 606 pF @ 20 V
auf Bestellung 56754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 28+ | 0.75 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.36 EUR |