auf Bestellung 65000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.23 EUR |
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Technische Details DMN6070SSD-13 Diodes Zetex
Description: MOSFET 2N-CH 60V 3.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V, Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMN6070SSD-13 nach Preis ab 0.18 EUR bis 1.28 EUR
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DMN6070SSD-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 3.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SSD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R |
auf Bestellung 1725 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6070SSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Case: SO8 On-state resistance: 0.1Ω Power dissipation: 1.2W Drain current: 3.6A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 13 inch reel; tape Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1057 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN6070SSD-13 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Case: SO8 On-state resistance: 0.1Ω Power dissipation: 1.2W Drain current: 3.6A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: 13 inch reel; tape Polarisation: unipolar |
auf Bestellung 1057 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6070SSD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R |
auf Bestellung 1175 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6070SSD-13 | Hersteller : Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 60Vdss 20Vgss |
auf Bestellung 36099 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SSD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 3.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 15551 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SSD-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6070SSD-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R |
Produkt ist nicht verfügbar |