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Technische Details DMN6070SSD-13 Diodes Zetex
Description: MOSFET 2N-CH 60V 3.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 3.3A, Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V, Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active.
Weitere Produktangebote DMN6070SSD-13 nach Preis ab 0.21 EUR bis 1.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMN6070SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 3.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SSD-13 | Diodes Zetex |
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R |
auf Bestellung 1725 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6070SSD-13 | Diodes Zetex |
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R |
auf Bestellung 1175 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6070SSD-13 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 60Vdss 20Vgss |
auf Bestellung 36099 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 3.3A 8SORds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.3A Drain to Source Voltage (Vdss): 60V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN6070SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.49 EUR |
| 5000+ | 0.44 EUR |
| DMN6070SSD-13 |
![]() |
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
auf Bestellung 1725 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 222+ | 0.8 EUR |
| 318+ | 0.55 EUR |
| 321+ | 0.54 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.26 EUR |
| DMN6070SSD-13 |
![]() |
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
auf Bestellung 1175 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 186+ | 0.95 EUR |
| 220+ | 0.77 EUR |
| 222+ | 0.74 EUR |
| 318+ | 0.5 EUR |
| 321+ | 0.48 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.21 EUR |
| DMN6070SSD-13 |
![]() |
Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 60Vdss 20Vgss
MOSFETs N-Ch Enh Mode FET 60Vdss 20Vgss
auf Bestellung 36099 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.42 EUR |
| 2500+ | 0.32 EUR |
| DMN6070SSD-13 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Description: MOSFET 2N-CH 60V 3.3A 8SO
Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.93 EUR |
| 18+ | 1.2 EUR |
| 100+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |




