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Technische Details DMN6070SSD-13 Diodes Zetex
Description: DIODES INC. - DMN6070SSD-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.3 A, 3.3 A, 0.08 ohm, tariffCode: 85411000, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 3.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 60V, Dauer-Drainstrom Id, n-Kanal: 3.3A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 1.5W, Drain-Source-Spannung Vds, n-Kanal: 60V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.08ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1.5W, Betriebstemperatur, max.: 150°C.
Weitere Produktangebote DMN6070SSD-13 nach Preis ab 0.21 EUR bis 2.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMN6070SSD-13 | Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 3.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SSD-13 | Diodes Zetex |
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R |
auf Bestellung 1725 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6070SSD-13 | Diodes Zetex |
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R |
auf Bestellung 1175 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6070SSD-13 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8 Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Power dissipation: 1.2W Polarisation: unipolar Drain current: 3.6A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 0.1Ω |
auf Bestellung 2350 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6070SSD-13 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 60Vdss 20Vgss |
auf Bestellung 36099 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SSD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 3.3A 8SO Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3.3A Drain to Source Voltage (Vdss): 60V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V |
auf Bestellung 2822 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6070SSD-13 | DIODES INC. |
Description: DIODES INC. - DMN6070SSD-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.3 A, 3.3 A, 0.08 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V Dauer-Drainstrom Id, n-Kanal: 3.3A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.08ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C |
auf Bestellung 14900 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6070SSD-13 | DIODES INC. |
Description: DIODES INC. - DMN6070SSD-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.3 A, 3.3 A, 0.08 ohm tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V Dauer-Drainstrom Id, n-Kanal: 3.3A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.08ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C |
auf Bestellung 14900 Stücke: Lieferzeit 14-21 Tag (e) |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.51 EUR |
| DMN6070SSD-13 |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
auf Bestellung 1725 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 222+ | 0.77 EUR |
| 318+ | 0.54 EUR |
| 321+ | 0.52 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.25 EUR |
| DMN6070SSD-13 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
Trans MOSFET N-CH 60V 3.3A 8-Pin SO T/R
auf Bestellung 1175 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 186+ | 0.93 EUR |
| 220+ | 0.76 EUR |
| 222+ | 0.73 EUR |
| 318+ | 0.49 EUR |
| 321+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.21 EUR |
| DMN6070SSD-13 |
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Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Drain current: 3.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.6A; 1.2W; SO8
Case: SO8
Mounting: SMD
Kind of package: 13 inch reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Drain current: 3.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
auf Bestellung 2350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 75+ | 1.14 EUR |
| 121+ | 0.7 EUR |
| 185+ | 0.46 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.33 EUR |
| DMN6070SSD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 60Vdss 20Vgss
MOSFETs N-Ch Enh Mode FET 60Vdss 20Vgss
auf Bestellung 36099 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.15 EUR |
| 10+ | 0.88 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.42 EUR |
| 2500+ | 0.32 EUR |
| DMN6070SSD-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Description: MOSFET 2N-CH 60V 3.3A 8SO
Rds On (Max) @ Id, Vgs: 80mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 588pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
auf Bestellung 2822 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.03 EUR |
| 17+ | 1.26 EUR |
| 25+ | 1.06 EUR |
| 50+ | 0.93 EUR |
| 100+ | 0.82 EUR |
| DMN6070SSD-13 |
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Hersteller: DIODES INC.
Description: DIODES INC. - DMN6070SSD-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.3 A, 3.3 A, 0.08 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
Dauer-Drainstrom Id, n-Kanal: 3.3A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.08ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.5W
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMN6070SSD-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.3 A, 3.3 A, 0.08 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
Dauer-Drainstrom Id, n-Kanal: 3.3A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.08ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.5W
Betriebstemperatur, max.: 150°C
auf Bestellung 14900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 2.34 EUR |
| 171+ | 1.37 EUR |
| 261+ | 0.82 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| 5000+ | 0.5 EUR |
| DMN6070SSD-13 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMN6070SSD-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.3 A, 3.3 A, 0.08 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
Dauer-Drainstrom Id, n-Kanal: 3.3A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.08ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.5W
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMN6070SSD-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 3.3 A, 3.3 A, 0.08 ohm
tariffCode: 85411000
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
Dauer-Drainstrom Id, n-Kanal: 3.3A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 60V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.08ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.5W
Betriebstemperatur, max.: 150°C
auf Bestellung 14900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 2.34 EUR |
| 171+ | 1.37 EUR |
| 261+ | 0.82 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| 5000+ | 0.5 EUR |