DMN6140LQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.6A SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.16 EUR |
| 20000+ | 0.15 EUR |
| 30000+ | 0.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN6140LQ-13 Diodes Incorporated
Description: MOSFET N-CH 60V 1.6A SOT23, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN6140LQ-13 nach Preis ab 0.12 EUR bis 0.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN6140LQ-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3 Kind of package: 13 inch reel; tape Application: automotive industry Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Case: SOT23-3 Gate charge: 8.6nC On-state resistance: 0.17Ω Power dissipation: 0.4W Drain current: 1.2A Pulsed drain current: 10A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
auf Bestellung 4527 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
DMN6140LQ-13 | Diodes Incorporated |
MOSFETs 60V N-Ch Enh FET 60Vdss 20Vgss 10A |
auf Bestellung 10933 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
DMN6140LQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 1.6A SOT23 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 58980 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN6140LQ-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Gate charge: 8.6nC
On-state resistance: 0.17Ω
Power dissipation: 0.4W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3
Kind of package: 13 inch reel; tape
Application: automotive industry
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Gate charge: 8.6nC
On-state resistance: 0.17Ω
Power dissipation: 0.4W
Drain current: 1.2A
Pulsed drain current: 10A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
auf Bestellung 4527 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 221+ | 0.32 EUR |
| 343+ | 0.21 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.12 EUR |
| DMN6140LQ-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 60V N-Ch Enh FET 60Vdss 20Vgss 10A
MOSFETs 60V N-Ch Enh FET 60Vdss 20Vgss 10A
auf Bestellung 10933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.3 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.18 EUR |
| 5000+ | 0.16 EUR |
| 10000+ | 0.15 EUR |
| DMN6140LQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 1.6A SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 1.6A SOT23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 58980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 36+ | 0.5 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.17 EUR |
| 5000+ | 0.16 EUR |