DMN6140LQ-13 Diodes Zetex
auf Bestellung 130000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.12 EUR |
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Technische Details DMN6140LQ-13 Diodes Zetex
Description: MOSFET N-CH 60V 1.6A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN6140LQ-13 nach Preis ab 0.13 EUR bis 0.81 EUR
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DMN6140LQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 1.6A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6140LQ-13 | Hersteller : Diodes Incorporated |
MOSFETs 60V N-Ch Enh FET 60Vdss 20Vgss 10A |
auf Bestellung 17485 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6140LQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 1.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 58980 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6140LQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 2.3A Automotive AEC-Q101 3-Pin SOT-23 T/R |
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DMN6140LQ-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 2.3A Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DMN6140LQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3 Kind of package: 13 inch reel; tape Case: SOT23-3 Drain-source voltage: 60V Drain current: 1.2A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Gate charge: 8.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 10A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
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DMN6140LQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3 Kind of package: 13 inch reel; tape Case: SOT23-3 Drain-source voltage: 60V Drain current: 1.2A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.4W Polarisation: unipolar Gate charge: 8.6nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 10A Mounting: SMD |
Produkt ist nicht verfügbar |