DMN6140LQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 60V 1.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.14 EUR |
| 50000+ | 0.13 EUR |
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Technische Details DMN6140LQ-13 Diodes Incorporated
Description: MOSFET N-CH 60V 1.6A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V.
Weitere Produktangebote DMN6140LQ-13 nach Preis ab 0.11 EUR bis 0.62 EUR
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DMN6140LQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.2A Pulsed drain current: 10A Power dissipation: 0.4W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 5 Stücke |
auf Bestellung 8200 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN6140LQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 10A; 0.4W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.2A Pulsed drain current: 10A Power dissipation: 0.4W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 8200 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN6140LQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 1.6A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.8A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 40 V |
auf Bestellung 97723 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN6140LQ-13 | Hersteller : Diodes Zetex |
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DMN6140LQ-13 | Hersteller : Diodes Incorporated |
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