DMN61D8L-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 3V, 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 390mW (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
Current - Continuous Drain (Id) @ 25°C: 470mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details DMN61D8L-13 Diodes Incorporated
Description: MOSFET N-CH 60V 470MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 12.9 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 0.74 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 3V, 5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 390mW (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V, Current - Continuous Drain (Id) @ 25°C: 470mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN61D8L-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DMN61D8L-13 | Diodes Incorporated |
MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DMN61D8L-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 370mA; 610mW; SOT23 Mounting: SMD Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: 13 inch reel; tape Case: SOT23 On-state resistance: 2.4Ω Power dissipation: 0.61W Gate charge: 740pC Polarisation: unipolar Drain current: 0.37A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN61D8L-13 |
|
Hersteller: Diodes Incorporated
MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA
MOSFET 60V Switching Diode 1.8Ohm at 5Vgs 470mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN61D8L-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 370mA; 610mW; SOT23
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance: 2.4Ω
Power dissipation: 0.61W
Gate charge: 740pC
Polarisation: unipolar
Drain current: 0.37A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 370mA; 610mW; SOT23
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
Case: SOT23
On-state resistance: 2.4Ω
Power dissipation: 0.61W
Gate charge: 740pC
Polarisation: unipolar
Drain current: 0.37A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH