auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.07 EUR |
Produktrezensionen
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Technische Details DMN61D9U-7 Diodes Zetex
Description: MOSFET N-CH 60V 380MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 380mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Power Dissipation (Max): 370mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V.
Weitere Produktangebote DMN61D9U-7 nach Preis ab 0.07 EUR bis 0.47 EUR
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DMN61D9U-7 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN61D9U-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.38A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN61D9U-7 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN61D9U-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN61D9U-7 - MOSFET, AEC-Q101, N-CH, 0.38A, 60V, SOT2 tariffCode: 85412100 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 380mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 370mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm directShipCharge: 25 SVHC: No SVHC (10-Jun-2022) |
Produkt ist nicht verfügbar |
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DMN61D9U-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 380MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V |
Produkt ist nicht verfügbar |
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DMN61D9U-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 380MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V |
Produkt ist nicht verfügbar |