Technische Details DMN61D9U-7 Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V, Part Status: Obsolete, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 370mW (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Current - Continuous Drain (Id) @ 25°C: 380mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN61D9U-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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DMN61D9U-7 | Diodes Incorporated |
 Description: MOSFET N-CH 60V 380MA SOT23Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Part Status: Obsolete Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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DMN61D9U-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 380MA SOT23 Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Part Status: Obsolete Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMN61D9U-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 380MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN61D9U-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 380MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH