DMN61D9UDWQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 60V 0.318A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.083 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN61D9UDWQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.318A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 370mW (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 318mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V, Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN61D9UDWQ-7 nach Preis ab 0.043 EUR bis 0.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN61D9UDWQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.318A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 370mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 318mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| DMN61D9UDWQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.318A Automotive AEC-Q101 6-Pin SOT-363 T/R |
auf Bestellung 111000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
| DMN61D9UDWQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.318A Automotive AEC-Q101 6-Pin SOT-363 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
| DMN61D9UDWQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.318A Automotive AEC-Q101 6-Pin SOT-363 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||
| DMN61D9UDWQ-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 0.318A Automotive AEC-Q101 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |