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DMN61D9UDWQ-7 Diodes Incorporated


DMN61D9UDWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.318A SOT363
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 370mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.083 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN61D9UDWQ-7 Diodes Incorporated

Description: MOSFET 2N-CH 60V 0.318A SOT363, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 318mA (Ta), Drain to Source Voltage (Vdss): 60V, Power - Max: 370mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).

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DMN61D9UDWQ-7 DMN61D9UDWQ-7 Diodes Incorporated DMN61D9UDWQ.pdf Description: MOSFET 2N-CH 60V 0.318A SOT363
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 370mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
52+0.34 EUR
107+0.17 EUR
500+0.14 EUR
1000+0.096 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN61D9UDWQ-7 DMN61D9UDWQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.318A SOT363
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 318mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 370mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
36+0.49 EUR
52+0.34 EUR
107+0.17 EUR
500+0.14 EUR
1000+0.096 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH