auf Bestellung 130000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.04 EUR |
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Technische Details DMN62D0LFD-13 Diodes Zetex
Description: MOSFET N-CH X1-DFN1212-3, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V, Power Dissipation (Max): 480mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1212-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V.
Weitere Produktangebote DMN62D0LFD-13 nach Preis ab 0.06 EUR bis 0.51 EUR
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DMN62D0LFD-13 | Hersteller : Diodes Incorporated | MOSFETs 2N7002 Family X1-DFN1212-3 T&R 10K |
auf Bestellung 9460 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFD-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH X1-DFN1212-3 Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1212-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V |
auf Bestellung 129000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFD-13 | Hersteller : Diodes Inc |
 Trans MOSFET N-CH 60V 0.31A 3-Pin X1-DFN EP T/R |
Produkt ist nicht verfügbar |