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Technische Details DMN62D0LFD-13 Diodes Zetex
Description: MOSFET N-CH X1-DFN1212-3, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V, Part Status: Obsolete, Supplier Device Package: X1-DFN1212-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 480mW (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V.
Weitere Produktangebote DMN62D0LFD-13 nach Preis ab 0.088 EUR bis 0.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMN62D0LFD-13 | Diodes Incorporated |
 MOSFETs 2N7002 Family X1-DFN1212-3 T&R 10K |
auf Bestellung 9460 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0LFD-13 | Diodes Incorporated |
Description: MOSFET N-CH X1-DFN1212-3 Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-UDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Part Status: Obsolete Supplier Device Package: X1-DFN1212-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 480mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V |
auf Bestellung 129000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMN62D0LFD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 2N7002 Family X1-DFN1212-3 T&R 10K
MOSFETs 2N7002 Family X1-DFN1212-3 T&R 10K
auf Bestellung 9460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.56 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2500+ | 0.1 EUR |
| 5000+ | 0.088 EUR |
| DMN62D0LFD-13 |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH X1-DFN1212-3
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Obsolete
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
Description: MOSFET N-CH X1-DFN1212-3
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 31 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Part Status: Obsolete
Supplier Device Package: X1-DFN1212-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 480mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4V
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)