DMN62D0U-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.068 EUR |
| 30000+ | 0.066 EUR |
| 50000+ | 0.06 EUR |
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Technische Details DMN62D0U-13 Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 380mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 380mW (Ta).
Weitere Produktangebote DMN62D0U-13 nach Preis ab 0.055 EUR bis 0.53 EUR
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DMN62D0U-13 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 60V 20Vgss 1.2A |
auf Bestellung 105694 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0U-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 380MA SOT23 Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 380mW (Ta) |
auf Bestellung 96419 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0U-13 |
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Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 60V 20Vgss 1.2A
MOSFETs N-Ch Enh Mode FET 60V 20Vgss 1.2A
auf Bestellung 105694 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 0.28 EUR |
| 23+ | 0.12 EUR |
| 100+ | 0.081 EUR |
| 1000+ | 0.069 EUR |
| 2500+ | 0.062 EUR |
| 10000+ | 0.058 EUR |
| 20000+ | 0.055 EUR |
| DMN62D0U-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
Description: MOSFET N-CH 60V 380MA SOT23
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 380mW (Ta)
auf Bestellung 96419 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 34+ | 0.53 EUR |
| 50+ | 0.36 EUR |
| 101+ | 0.17 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.1 EUR |
| 2000+ | 0.088 EUR |
| 5000+ | 0.081 EUR |