DMN62D0UDW-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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Technische Details DMN62D0UDW-7 Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363, Part Status: Active, Supplier Device Package: SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V, Current - Continuous Drain (Id) @ 25°C: 350mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 320mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN62D0UDW-7 nach Preis ab 0.083 EUR bis 0.51 EUR
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DMN62D0UDW-7 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 60V 20Vgss 1.2A |
auf Bestellung 125839 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0UDW-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.35A SOT363 Supplier Device Package: SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Current - Continuous Drain (Id) @ 25°C: 350mA Drain to Source Voltage (Vdss): 60V Power - Max: 320mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active |
auf Bestellung 3384 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UDW-7 |
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Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode FET 60V 20Vgss 1.2A
MOSFETs N-Ch Enh Mode FET 60V 20Vgss 1.2A
auf Bestellung 125839 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 0.29 EUR |
| 14+ | 0.21 EUR |
| 100+ | 0.14 EUR |
| 1000+ | 0.092 EUR |
| 3000+ | 0.083 EUR |
| DMN62D0UDW-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.35A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Description: MOSFET 2N-CH 60V 0.35A SOT363
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 350mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 320mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 3384 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 35+ | 0.51 EUR |
| 56+ | 0.32 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |