auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.071 EUR |
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Technische Details DMN62D0UDW-7 Diodes Zetex
Description: MOSFET 2N-CH 60V 0.35A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 320mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 350mA, Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V, Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote DMN62D0UDW-7 nach Preis ab 0.077 EUR bis 0.74 EUR
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DMN62D0UDW-7 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 60V 0.35A 6-Pin SOT-363 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN62D0UDW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.35A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0UDW-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.35A 6-Pin SOT-363 T/R |
auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN62D0UDW-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.29A Power dissipation: 0.32W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2225 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN62D0UDW-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.29A; 0.32W; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.29A Power dissipation: 0.32W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 2225 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN62D0UDW-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 0.35A 6-Pin SOT-363 T/R |
auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN62D0UDW-7 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A |
auf Bestellung 180314 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0UDW-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.35A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
auf Bestellung 10542 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0UDW-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 0.35A 6-Pin SOT-363 T/R |
auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |