auf Bestellung 366000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.054 EUR |
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Technische Details DMN62D0UT-7 Diodes Zetex
Description: MOSFET N-CH 60V 0.32A SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V, Power Dissipation (Max): 230mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V.
Weitere Produktangebote DMN62D0UT-7 nach Preis ab 0.062 EUR bis 0.46 EUR
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DMN62D0UT-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 60V 0.32A SOT523Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V Power Dissipation (Max): 230mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V |
auf Bestellung 2670000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0UT-7 | Hersteller : Diodes Incorporated |
MOSFETs N-Ch Enh Mode Fet 60V 20Vgss 0.47W |
auf Bestellung 12433 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0UT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 60V 0.32A SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V Power Dissipation (Max): 230mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V |
auf Bestellung 2672898 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0UT-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 60V 0.32A 3-Pin SOT-523 T/R |
Produkt ist nicht verfügbar |
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DMN62D0UT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 260mA; Idm: 1.2A; 340mW; SOT523 Type of transistor: N-MOSFET Mounting: SMD Case: SOT523 Polarisation: unipolar Drain-source voltage: 60V Kind of package: 7 inch reel; tape Drain current: 0.26A Gate charge: 0.5nC Power dissipation: 0.34W On-state resistance: 3Ω Gate-source voltage: ±20V Pulsed drain current: 1.2A Kind of channel: enhancement |
Produkt ist nicht verfügbar |