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Technische Details DMN62D0UT-7 Diodes Zetex
Description: MOSFET N-CH 60V 0.32A SOT523, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-523, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 230mW (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 320mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN62D0UT-7 nach Preis ab 0.063 EUR bis 0.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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DMN62D0UT-7 | Diodes Incorporated |
 Description: MOSFET N-CH 60V 0.32A SOT523Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 230mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Tape & Reel (TR) |
auf Bestellung 2670000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D0UT-7 | Diodes Incorporated |
MOSFETs N-Ch Enh Mode Fet 60V 20Vgss 0.47W |
auf Bestellung 32739 Stücke: Lieferzeit 290-294 Tag (e) |
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DMN62D0UT-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 0.32A SOT523 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-523 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-523 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 230mW (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) FET Type: N-Channel |
auf Bestellung 2672898 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN62D0UT-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 0.32A SOT523
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 230mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 0.32A SOT523
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 230mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
auf Bestellung 2670000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.11 EUR |
| 6000+ | 0.1 EUR |
| 9000+ | 0.09 EUR |
| 15000+ | 0.088 EUR |
| 21000+ | 0.087 EUR |
| 30000+ | 0.079 EUR |
| 75000+ | 0.075 EUR |
| 150000+ | 0.074 EUR |
| DMN62D0UT-7 |
|
Hersteller: Diodes Incorporated
MOSFETs N-Ch Enh Mode Fet 60V 20Vgss 0.47W
MOSFETs N-Ch Enh Mode Fet 60V 20Vgss 0.47W
auf Bestellung 32739 Stücke:
Lieferzeit 290-294 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 0.46 EUR |
| 13+ | 0.27 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.063 EUR |
| DMN62D0UT-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 0.32A SOT523
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 230mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
Description: MOSFET N-CH 60V 0.32A SOT523
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-523
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 230mW (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
FET Type: N-Channel
auf Bestellung 2672898 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 0.55 EUR |
| 63+ | 0.33 EUR |
| 147+ | 0.14 EUR |