Produkte > DIODES INCORPORATED > DMN62D0UWQ-13
DMN62D0UWQ-13

DMN62D0UWQ-13 Diodes Incorporated

DMN62D0UWQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 220000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.10 EUR
30000+0.10 EUR
50000+0.08 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMN62D0UWQ-13 Diodes Incorporated

Description: MOSFET N-CH 60V 340MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 340mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V, Qualification: AEC-Q101.

Weitere Produktangebote DMN62D0UWQ-13 nach Preis ab 0.09 EUR bis 0.67 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMN62D0UWQ-13 DMN62D0UWQ-13 Hersteller : Diodes Incorporated DMN62D0UWQ.pdf Description: MOSFET N-CH 60V 340MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 226920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
39+0.46 EUR
100+0.23 EUR
500+0.19 EUR
1000+0.14 EUR
2000+0.12 EUR
5000+0.11 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UWQ-13 DMN62D0UWQ-13 Hersteller : Diodes Incorporated DIOD_S_A0008363660_1-2543053.pdf MOSFET MOSFET BVDSS: 31V-40V
auf Bestellung 19500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.67 EUR
10+0.49 EUR
100+0.23 EUR
1000+0.14 EUR
2500+0.12 EUR
10000+0.10 EUR
20000+0.09 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UWQ-13 Hersteller : Diodes Inc dmn62d0uwq.pdf High Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UWQ-13 Hersteller : Diodes Zetex dmn62d0uwq.pdf High Enhancement Mode MOSFET Automotive AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN62D0UWQ-13 Hersteller : DIODES INCORPORATED DMN62D0UWQ.pdf DMN62D0UWQ-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH