auf Bestellung 5746 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.59 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.22 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.081 EUR |
| 6000+ | 0.063 EUR |
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Produktbewertung abgeben
Technische Details DMN62D2UQ-7 Diodes Incorporated
Description: 2N7002 FAMILY SOT23 T&R 3K, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 390mA (Ta), Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN62D2UQ-7 nach Preis ab 0.11 EUR bis 0.6 EUR
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DMN62D2UQ-7 | Hersteller : Diodes Incorporated |
Description: 2N7002 FAMILY SOT23 T&R 3KPackage / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Qualification: AEC-Q101 |
auf Bestellung 1445 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN62D2UQ-7 | Hersteller : Diodes Incorporated |
Description: 2N7002 FAMILY SOT23 T&R 3KPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DMN62D2UQ-7 | Hersteller : Diodes Incorporated |
Description: 2N7002 FAMILY SOT23 T&R 3KPackage / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 390mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
