DMN63D8LW-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 380MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.066 EUR |
| 6000+ | 0.061 EUR |
| 9000+ | 0.051 EUR |
| 30000+ | 0.05 EUR |
| 75000+ | 0.045 EUR |
| 150000+ | 0.039 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN63D8LW-7 Diodes Incorporated
Description: MOSFET N-CH 30V 380MA SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 380mA (Ta), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V.
Weitere Produktangebote DMN63D8LW-7 nach Preis ab 0.076 EUR bis 0.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN63D8LW-7 | Diodes Incorporated |
Description: MOSFET N-CH 30V 380MA SOT323Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: SOT-323 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 300mW (Ta) Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V Current - Continuous Drain (Id) @ 25°C: 380mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 1940226 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
DMN63D8LW-7 | Diodes Incorporated |
MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A |
auf Bestellung 16775 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN63D8LW-7 |
![]() |
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 380MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 380MA SOT323
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
auf Bestellung 1940226 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 66+ | 0.27 EUR |
| 135+ | 0.13 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.076 EUR |
| DMN63D8LW-7 |
![]() |
Hersteller: Diodes Incorporated
MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A
MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A
auf Bestellung 16775 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.46 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.13 EUR |

