DMN65D8L-7-W Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.065 EUR |
| 9000+ | 0.055 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN65D8L-7-W Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V, Power Dissipation (Max): 370mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V.
Weitere Produktangebote DMN65D8L-7-W nach Preis ab 0.13 EUR bis 0.36 EUR
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DMN65D8L-7-W | Diodes Incorporated |
Description: MOSFET N-CH 60V 310MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V Power Dissipation (Max): 370mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V |
auf Bestellung 278539 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN65D8L-7-W |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Description: MOSFET N-CH 60V 310MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 370mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
auf Bestellung 278539 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 104+ | 0.2 EUR |
| 119+ | 0.18 EUR |
| 137+ | 0.15 EUR |
| 159+ | 0.13 EUR |