DMN65D8L-7-W Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.065 EUR |
| 9000+ | 0.055 EUR |
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Technische Details DMN65D8L-7-W Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23, Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 370mW (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V, Current - Continuous Drain (Id) @ 25°C: 310mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN65D8L-7-W nach Preis ab 0.13 EUR bis 0.36 EUR
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DMN65D8L-7-W | Diodes Incorporated |
Description: MOSFET N-CH 60V 310MA SOT23 Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 370mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 278539 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN65D8L-7-W |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 310MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 310MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 370mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 278539 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 0.36 EUR |
| 104+ | 0.2 EUR |
| 119+ | 0.18 EUR |
| 137+ | 0.15 EUR |
| 159+ | 0.13 EUR |