DMN65D8LW-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 300MA SOT323
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.21 EUR |
| 6000+ | 0.19 EUR |
| 9000+ | 0.18 EUR |
| 15000+ | 0.17 EUR |
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Technische Details DMN65D8LW-7 Diodes Incorporated
Description: MOSFET N-CH 60V 300MA SOT323, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 300mW (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V.
Weitere Produktangebote DMN65D8LW-7 nach Preis ab 0.17 EUR bis 0.95 EUR
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DMN65D8LW-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.26A; 0.3W; SOT323; ESD Case: SOT323 Mounting: SMD Kind of package: 7 inch reel; tape Version: ESD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.26A Power dissipation: 0.3W On-state resistance: 4Ω Gate-source voltage: ±20V Drain-source voltage: 60V |
auf Bestellung 2976 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN65D8LW-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K |
auf Bestellung 4614 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN65D8LW-7 | Diodes Incorporated |
Description: MOSFET N-CH 60V 300MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V |
auf Bestellung 27029 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.26A; 0.3W; SOT323; ESD
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.26A
Power dissipation: 0.3W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.26A; 0.3W; SOT323; ESD
Case: SOT323
Mounting: SMD
Kind of package: 7 inch reel; tape
Version: ESD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.26A
Power dissipation: 0.3W
On-state resistance: 4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 2976 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 166+ | 0.43 EUR |
| 187+ | 0.38 EUR |
| 304+ | 0.24 EUR |
| 500+ | 0.17 EUR |
| DMN65D8LW-7 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K
MOSFETs MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K
auf Bestellung 4614 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.7 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.25 EUR |
| 3000+ | 0.18 EUR |
| DMN65D8LW-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 300MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Description: MOSFET N-CH 60V 300MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 115mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
auf Bestellung 27029 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.95 EUR |
| 31+ | 0.59 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |