DMN65D9L-13 Diodes Incorporated

Description: MOSFET BVDSS: 41V-60V SOT23, Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 270mW (Ta), Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 335mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).