DMNH4006SK3-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
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Technische Details DMNH4006SK3-13 Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.2W (Ta), Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252-3.
Weitere Produktangebote DMNH4006SK3-13 nach Preis ab 2.83 EUR bis 2.83 EUR
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DMNH4006SK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 18A/90A TO252 Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.2W (Ta) |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMNH4006SK3-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Description: MOSFET N-CH 40V 18A/90A TO252
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.83 EUR |