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DMNH6021SK3Q-13

DMNH6021SK3Q-13 Diodes Incorporated

DMNH6021SK3Q.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 975000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.52 EUR
5000+0.50 EUR
7500+0.49 EUR
12500+0.48 EUR
Mindestbestellmenge: 2500
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Technische Details DMNH6021SK3Q-13 Diodes Incorporated

Description: MOSFET N-CH 60V 50A TO252-2, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote DMNH6021SK3Q-13 nach Preis ab 0.50 EUR bis 0.99 EUR

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DMNH6021SK3Q-13 DMNH6021SK3Q-13 Hersteller : Diodes Incorporated DMNH6021SK3Q-3214118.pdf MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 7692 Stücke:
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Anzahl Preis
3+0.99 EUR
10+0.98 EUR
100+0.75 EUR
500+0.62 EUR
1000+0.55 EUR
2500+0.51 EUR
5000+0.50 EUR
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DMNH6021SK3Q-13 DMNH6021SK3Q-13 Hersteller : Diodes Incorporated DMNH6021SK3Q.pdf Description: MOSFET N-CH 60V 50A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 976626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
100+0.77 EUR
500+0.66 EUR
1000+0.58 EUR
Mindestbestellmenge: 18
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DMNH6021SK3Q-13 DMNH6021SK3Q-13 Hersteller : Diodes Inc 1802dmnh6021sk3q.pdf Trans MOSFET N-CH 60V 50A Automotive 3-Pin(2+Tab) DPAK T/R
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DMNH6021SK3Q-13 Hersteller : DIODES INCORPORATED DMNH6021SK3Q.pdf DMNH6021SK3Q-13 SMD N channel transistors
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