DMNH6021SK3Q-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.52 EUR |
| 5000+ | 0.5 EUR |
| 7500+ | 0.49 EUR |
| 12500+ | 0.48 EUR |
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Technische Details DMNH6021SK3Q-13 Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.1W (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMNH6021SK3Q-13 nach Preis ab 0.46 EUR bis 0.99 EUR
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DMNH6021SK3Q-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 6746 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH6021SK3Q-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 50A TO252-2 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 976626 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMNH6021SK3Q-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 6746 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.71 EUR |
| 10+ | 0.68 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.5 EUR |
| 2500+ | 0.46 EUR |
| DMNH6021SK3Q-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 50A TO252-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 50A TO252-2
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1143 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 976626 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 0.99 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.58 EUR |