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DMNH6022SSDQ-13

DMNH6022SSDQ-13 Diodes Zetex


2305dmnh6022ssdq.pdf Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 7.1A Automotive AEC-Q101 8-Pin SO T/R
auf Bestellung 10000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2500+0.62 EUR
Mindestbestellmenge: 2500
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Technische Details DMNH6022SSDQ-13 Diodes Zetex

Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A, Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V, Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMNH6022SSDQ-13 nach Preis ab 0.63 EUR bis 1.72 EUR

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Preis ohne MwSt
DMNH6022SSDQ-13 DMNH6022SSDQ-13 Hersteller : Diodes Incorporated DMNH6022SSDQ.pdf Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.7 EUR
5000+ 0.67 EUR
12500+ 0.63 EUR
Mindestbestellmenge: 2500
DMNH6022SSDQ-13 DMNH6022SSDQ-13 Hersteller : Diodes Incorporated DMNH6022SSDQ.pdf Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.69 EUR
13+ 1.38 EUR
100+ 1.07 EUR
500+ 0.91 EUR
1000+ 0.74 EUR
Mindestbestellmenge: 11
DMNH6022SSDQ-13 DMNH6022SSDQ-13 Hersteller : Diodes Incorporated DIOD_S_A0002497828_1-2542081.pdf MOSFET MOSFET BVDSS: 41V-60V
auf Bestellung 6431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.72 EUR
10+ 1.41 EUR
100+ 1.09 EUR
500+ 0.93 EUR
1000+ 0.76 EUR
2500+ 0.68 EUR
5000+ 0.67 EUR
Mindestbestellmenge: 2
DMNH6022SSDQ-13 DMNH6022SSDQ-13 Hersteller : Diodes Zetex 2305dmnh6022ssdq.pdf Trans MOSFET N-CH 60V 7.1A Automotive AEC-Q101 8-Pin SO T/R
Produkt ist nicht verfügbar
DMNH6022SSDQ-13 DMNH6022SSDQ-13 Hersteller : Diodes Zetex 2305dmnh6022ssdq.pdf Trans MOSFET N-CH 60V 7.1A Automotive AEC-Q101 8-Pin SO T/R
Produkt ist nicht verfügbar
DMNH6022SSDQ-13 DMNH6022SSDQ-13 Hersteller : DIODES INCORPORATED DMNH6022SSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 30mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 2.1W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 60V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
DMNH6022SSDQ-13 DMNH6022SSDQ-13 Hersteller : DIODES INCORPORATED DMNH6022SSDQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Case: SO8
On-state resistance: 30mΩ
Gate-source voltage: ±20V
Mounting: SMD
Pulsed drain current: 45A
Power dissipation: 2.1W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 5.9A
Kind of channel: enhanced
Drain-source voltage: 60V
Produkt ist nicht verfügbar