DMNH6022SSDQ-13 Diodes Zetex
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.58 EUR |
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Technische Details DMNH6022SSDQ-13 Diodes Zetex
Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A, Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V, Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMNH6022SSDQ-13 nach Preis ab 0.63 EUR bis 1.71 EUR
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DMNH6022SSDQ-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH6022SSDQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 60V 7.1A/22.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V Rds On (Max) @ Id, Vgs: 27mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 30V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 22559 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH6022SSDQ-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 5191 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH6022SSDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 7.1A Automotive AEC-Q101 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMNH6022SSDQ-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 60V 7.1A Automotive AEC-Q101 8-Pin SO T/R |
Produkt ist nicht verfügbar |
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DMNH6022SSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 5.9A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 32nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 45A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMNH6022SSDQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.9A; Idm: 45A; 2.1W; SO8 Mounting: SMD Case: SO8 Drain-source voltage: 60V Drain current: 5.9A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 32nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 45A |
Produkt ist nicht verfügbar |