DMNH6042SPSQ-13 Diodes Incorporated

Description: MOSFET N-CH 60V 24A PWRDI5060-8, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: PowerDI5060-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.9W (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).