DMP1009UFDFQ-7 Diodes Incorporated
auf Bestellung 7358 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.3 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |
| 3000+ | 0.31 EUR |
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Technische Details DMP1009UFDFQ-7 Diodes Incorporated
Description: MOSFET P-CH 12V 11A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP1009UFDFQ-7 nach Preis ab 0.38 EUR bis 1.37 EUR
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DMP1009UFDFQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 12V 11A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2938 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1009UFDFQ-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 12V 11A Automotive 6-Pin UDFN EP T/R |
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DMP1009UFDFQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 12V 11A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |