DMP1011LFV-13 DIODES INCORPORATED

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: -70A
Drain-source voltage: -12V
Drain current: -10A
Gate charge: 9.5nC
On-state resistance: 18.6mΩ
Power dissipation: 2.16W
Gate-source voltage: ±6V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
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Technische Details DMP1011LFV-13 DIODES INCORPORATED
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W, Case: PowerDI3333-8, Mounting: SMD, Kind of package: 13 inch reel; tape, Polarisation: unipolar, Pulsed drain current: -70A, Drain-source voltage: -12V, Drain current: -10A, Gate charge: 9.5nC, On-state resistance: 18.6mΩ, Power dissipation: 2.16W, Gate-source voltage: ±6V, Kind of channel: enhancement, Type of transistor: P-MOSFET, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMP1011LFV-13
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP1011LFV-13 | Hersteller : Diodes Incorporated |
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DMP1011LFV-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMP1011LFV-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W Case: PowerDI3333-8 Mounting: SMD Kind of package: 13 inch reel; tape Polarisation: unipolar Pulsed drain current: -70A Drain-source voltage: -12V Drain current: -10A Gate charge: 9.5nC On-state resistance: 18.6mΩ Power dissipation: 2.16W Gate-source voltage: ±6V Kind of channel: enhancement Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |