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DMP1011LFV-13 DIODES INCORPORATED


DMP1011LFV.pdf Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
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Technische Details DMP1011LFV-13 DIODES INCORPORATED

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W, Mounting: SMD, Power dissipation: 2.16W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 9.5nC, Kind of channel: enhanced, Gate-source voltage: ±6V, Pulsed drain current: -70A, Case: PowerDI3333-8, Drain-source voltage: -12V, Drain current: -10A, On-state resistance: 18.6mΩ, Type of transistor: P-MOSFET, Anzahl je Verpackung: 3000 Stücke.

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DMP1011LFV-13 Hersteller : Diodes Incorporated DMP1011LFV.pdf Description: MOSFET P-CH 12V 19A POWERDI3333
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DMP1011LFV-13 DMP1011LFV-13 Hersteller : Diodes Incorporated DIOD_S_A0003132601_1-2542187.pdf MOSFET MOSFETBVDSS: 8V-24V
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DMP1011LFV-13 Hersteller : DIODES INCORPORATED DMP1011LFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -10A; Idm: -70A; 2.16W
Mounting: SMD
Power dissipation: 2.16W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9.5nC
Kind of channel: enhanced
Gate-source voltage: ±6V
Pulsed drain current: -70A
Case: PowerDI3333-8
Drain-source voltage: -12V
Drain current: -10A
On-state resistance: 18.6mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar