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DMP1055USW-7

DMP1055USW-7 Diodes Incorporated

DMP1055USW.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 3.8A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Power Dissipation (Max): 660mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 6 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
6000+0.18 EUR
9000+0.17 EUR
15000+0.16 EUR
21000+0.15 EUR
Mindestbestellmenge: 3000
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Technische Details DMP1055USW-7 Diodes Incorporated

Description: MOSFET P-CH 12V 3.8A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V, Power Dissipation (Max): 660mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 6 V.

Weitere Produktangebote DMP1055USW-7 nach Preis ab 0.16 EUR bis 0.88 EUR

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DMP1055USW-7 DMP1055USW-7 Hersteller : Diodes Incorporated DIOD_S_A0003132704_1-2542435.pdf MOSFETs Dual P-Ch Enh FET Vdss -12V 8Vgss
auf Bestellung 3513 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.62 EUR
10+0.49 EUR
100+0.27 EUR
1000+0.18 EUR
3000+0.17 EUR
9000+0.16 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMP1055USW-7 DMP1055USW-7 Hersteller : Diodes Incorporated DMP1055USW.pdf Description: MOSFET P-CH 12V 3.8A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
Power Dissipation (Max): 660mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1028 pF @ 6 V
auf Bestellung 32588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
33+0.54 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 20
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DMP1055USW-7 Hersteller : DIODES INCORPORATED DMP1055USW.pdf DMP1055USW-7 SMD P channel transistors
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