DMP10H4D2S-7-50 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SOT23 T&R
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 380mW (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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Technische Details DMP10H4D2S-7-50 Diodes Incorporated
Description: MOSFET BVDSS: 61V~100V SOT23 T&R, Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 380mW (Ta), Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 270mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.