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DMP2004UFG-7

DMP2004UFG-7 Diodes Incorporated

DMP2004UFG.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 2K
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.01 EUR
10+1.27 EUR
100+0.84 EUR
500+0.69 EUR
1000+0.59 EUR
2000+0.55 EUR
4000+0.52 EUR
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Technische Details DMP2004UFG-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V PowerDI3333, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 115A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V, Power Dissipation (Max): 1W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V.

Weitere Produktangebote DMP2004UFG-7

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMP2004UFG-7 Diodes Incorporated Description: MOSFET BVDSS: 8V~24V PowerDI3333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP2004UFG-7
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V PowerDI3333
Packaging: Bulk
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH