DMP2004UFG-7 Diodes Incorporated
auf Bestellung 1876 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.47 EUR |
| 10+ | 1.31 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.63 EUR |
| 2000+ | 0.57 EUR |
| 4000+ | 0.53 EUR |
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Technische Details DMP2004UFG-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V PowerDI3333, Packaging: Bulk, Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 115A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V, Power Dissipation (Max): 1W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V.
Weitere Produktangebote DMP2004UFG-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMP2004UFG-7 | Hersteller : Diodes Zetex |
 20V P-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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| DMP2004UFG-7 | Hersteller : Diodes Inc |
20V P-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
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| DMP2004UFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Gate charge: 83nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -180A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: -20V Drain current: -95A On-state resistance: 7mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: 7 inch reel; tape Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2004UFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V PowerDI3333 Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V Power Dissipation (Max): 1W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 10 V |
Produkt ist nicht verfügbar |
||
| DMP2004UFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -95A; Idm: -180A; 2.4W Gate charge: 83nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -180A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: -20V Drain current: -95A On-state resistance: 7mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |