DMP2006UFG-7 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 2+ | 1.66 EUR |
| 10+ | 1.03 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.48 EUR |
| 2000+ | 0.43 EUR |
| 4000+ | 0.39 EUR |
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Technische Details DMP2006UFG-7 Diodes Incorporated
Description: MOSFET P-CH 20V 17.5A POWERDI, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Power Dissipation (Max): 2.3W (Ta), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc), Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 5404 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V.
Weitere Produktangebote DMP2006UFG-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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DMP2006UFG-7 | Diodes | MOSFET P-CH 20V 17.5A POWERDI Транзистори |
auf Bestellung 28000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
DMP2006UFG-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 17.5A POWERDI Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Power Dissipation (Max): 2.3W (Ta) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc) Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 1V @ 250µA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 5404 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 20 V |
auf Bestellung 306000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMP2006UFG-7 |
Hersteller: Diodes
MOSFET P-CH 20V 17.5A POWERDI Транзистори
MOSFET P-CH 20V 17.5A POWERDI Транзистори
auf Bestellung 28000 Stücke:
Lieferzeit 14-21 Tag (e)
| DMP2006UFG-7 |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 17.5A POWERDI
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5404 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET P-CH 20V 17.5A POWERDI
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 2.3W (Ta)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5404 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 306000 Stücke:
Lieferzeit 10-14 Tag (e)