Technische Details DMP2018LFK-13 Diodes Zetex
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W, Case: U-DFN2523-6, Drain-source voltage: -20V, Drain current: -10.3A, On-state resistance: 25mΩ, Type of transistor: P-MOSFET, Power dissipation: 1.3W, Polarisation: unipolar, Kind of package: 13 inch reel; tape, Gate charge: 113nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Pulsed drain current: -90A, Mounting: SMD, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMP2018LFK-13
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DMP2018LFK-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W Case: U-DFN2523-6 Drain-source voltage: -20V Drain current: -10.3A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 113nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -90A Mounting: SMD Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMP2018LFK-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10.3A; Idm: -90A; 1.3W Case: U-DFN2523-6 Drain-source voltage: -20V Drain current: -10.3A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 113nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -90A Mounting: SMD |
Produkt ist nicht verfügbar |