auf Bestellung 1077000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.24 EUR |
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Technische Details DMP2021UFDE-7 Diodes Zetex
Description: MOSFET P-CH 20V 11.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V.
Weitere Produktangebote DMP2021UFDE-7 nach Preis ab 0.26 EUR bis 0.9 EUR
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DMP2021UFDE-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 20V 11.1A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2021UFDE-7 | Hersteller : Diodes Zetex |
P-CHANNEL ENHANCEMENT MODE MOSFET |
auf Bestellung 530 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2021UFDE-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K |
auf Bestellung 4579 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2021UFDE-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 11.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 7A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 15 V |
auf Bestellung 43508 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2021UFDE-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8.9A Pulsed drain current: -60A Power dissipation: 1.2W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 80mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2021UFDE-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8.9A; Idm: -60A; 1.2W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8.9A Pulsed drain current: -60A Power dissipation: 1.2W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 80mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |