Produkte > DIODES ZETEX > DMP2036UVT-7

DMP2036UVT-7 Diodes Zetex


dmp2036uvt.pdf Hersteller: Diodes Zetex
High Enhancement Mode MOSFET
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details DMP2036UVT-7 Diodes Zetex

Description: MOSFET P-CH 20V 6A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V.

Weitere Produktangebote DMP2036UVT-7

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMP2036UVT-7 Hersteller : Diodes Inc dmp2036uvt.pdf High Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMP2036UVT-7 DMP2036UVT-7 Hersteller : DIODES INCORPORATED DMP2036UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMP2036UVT-7 DMP2036UVT-7 Hersteller : Diodes Incorporated DMP2036UVT.pdf Description: MOSFET P-CH 20V 6A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V
Produkt ist nicht verfügbar
DMP2036UVT-7 DMP2036UVT-7 Hersteller : Diodes Incorporated DIOD_S_A0007324766_1-2542939.pdf MOSFET MOSFET BVDSS: 8V~24V TSOT26 T&R 3K
Produkt ist nicht verfügbar
DMP2036UVT-7 DMP2036UVT-7 Hersteller : DIODES INCORPORATED DMP2036UVT.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -40A; 1W; TSOT26
Mounting: SMD
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Case: TSOT26
Drain-source voltage: -20V
Drain current: -5A
On-state resistance: 58mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Produkt ist nicht verfügbar