Technische Details DMP2036UVT-7 Diodes Zetex
Description: MOSFET P-CH 20V 6A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V.
Weitere Produktangebote DMP2036UVT-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMP2036UVT-7 | Hersteller : Diodes Inc |
 High Enhancement Mode MOSFET |
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| DMP2036UVT-7 | Hersteller : DIODES INCORPORATED |
DMP2036UVT-7 SMD P channel transistors |
Produkt ist nicht verfügbar |
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DMP2036UVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.4A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V |
Produkt ist nicht verfügbar |
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DMP2036UVT-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V~24V TSOT26 T&R 3K |
Produkt ist nicht verfügbar |