auf Bestellung 21000 Stücke:
Lieferzeit 178-182 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 1.03 EUR |
| 10+ | 0.89 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.44 EUR |
| 3000+ | 0.4 EUR |
| 6000+ | 0.37 EUR |
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Technische Details DMP2047UCB4-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4.1A U-WLB1010-4, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: U-WLB1010-4, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V.
Weitere Produktangebote DMP2047UCB4-7 nach Preis ab 0.24 EUR bis 1.09 EUR
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DMP2047UCB4-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 20V 4.1A U-WLB1010-4Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V |
auf Bestellung 2642 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2047UCB4-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4.1A 4-Pin U-WLB T/R |
auf Bestellung 2180 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2047UCB4-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4.1A 4-Pin U-WLB T/R |
auf Bestellung 2180 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2047UCB4-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 4.1A 4-Pin U-WLB T/R |
Produkt ist nicht verfügbar |
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| DMP2047UCB4-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4.1A 4-Pin U-WLB T/R |
Produkt ist nicht verfügbar |
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| DMP2047UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.2A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 1.66W Polarisation: unipolar Gate charge: 2.3nC Kind of channel: enhanced Gate-source voltage: ±6V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMP2047UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.1A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V |
Produkt ist nicht verfügbar |
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| DMP2047UCB4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W Mounting: SMD Case: U-WLB1010-4 Kind of package: reel; tape Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -3.2A On-state resistance: 60mΩ Type of transistor: P-MOSFET Power dissipation: 1.66W Polarisation: unipolar Gate charge: 2.3nC Kind of channel: enhanced Gate-source voltage: ±6V |
Produkt ist nicht verfügbar |