DMP2065UFDB-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.27 EUR |
| 9000+ | 0.26 EUR |
| 15000+ | 0.24 EUR |
| 21000+ | 0.23 EUR |
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Technische Details DMP2065UFDB-7 Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.54W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Weitere Produktangebote DMP2065UFDB-7 nach Preis ab 0.22 EUR bis 1.25 EUR
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DMP2065UFDB-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 3K |
auf Bestellung 23354 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2065UFDB-7 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 4.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
auf Bestellung 31489 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP2065UFDB-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 3K
MOSFETs MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 3K
auf Bestellung 23354 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.22 EUR |
| DMP2065UFDB-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 4.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Description: MOSFET 2P-CH 20V 4.5A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.54W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 31489 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |