Produkte > DIODES INCORPORATED > DMP2066LDM-7
DMP2066LDM-7

DMP2066LDM-7 Diodes Incorporated


Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A SOT-26
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
9000+0.23 EUR
15000+0.21 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMP2066LDM-7 Diodes Incorporated

Description: MOSFET P-CH 20V 4.6A SOT-26, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: SOT-26, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).

Weitere Produktangebote DMP2066LDM-7 nach Preis ab 0.3 EUR bis 1.11 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMP2066LDM-7 DMP2066LDM-7 Diodes Incorporated Description: MOSFET P-CH 20V 4.6A SOT-26
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 18337 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
26+0.69 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.3 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP2066LDM-7 DMP2066LDM-7 Diodes Incorporated ds31464-52267.pdf MOSFET P-channel 1.25W
auf Bestellung 9010 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DMP2066LDM-7
DMP2066LDM-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A SOT-26
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-26
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 18337 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
26+0.69 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.3 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP2066LDM-7 ds31464-52267.pdf
DMP2066LDM-7
Hersteller: Diodes Incorporated
MOSFET P-channel 1.25W
auf Bestellung 9010 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH