auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.21 EUR |
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Technische Details DMP2066LSN-7 Diodes Zetex
Description: MOSFET P-CH 20V 4.6A SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-59-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V.
Weitere Produktangebote DMP2066LSN-7 nach Preis ab 0.21 EUR bis 0.75 EUR
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DMP2066LSN-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 20V 4.6A SC59-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V |
auf Bestellung 126000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2066LSN-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4.6A 3-Pin SC-59 T/R |
auf Bestellung 493 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2066LSN-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4.6A 3-Pin SC-59 T/R |
auf Bestellung 493 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2066LSN-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.6A SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V |
auf Bestellung 133720 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2066LSN-7 | Hersteller : Diodes Incorporated |
MOSFET P-channel 1.25W |
auf Bestellung 16247 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066LSN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59 Mounting: SMD Case: SC59 Pulsed drain current: -18A Power dissipation: 1.25W Gate charge: 10.1nC Polarisation: unipolar Drain current: -3.7A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 70mΩ Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2066LSN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SC59 Mounting: SMD Case: SC59 Pulsed drain current: -18A Power dissipation: 1.25W Gate charge: 10.1nC Polarisation: unipolar Drain current: -3.7A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Kind of package: reel; tape On-state resistance: 70mΩ Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |