DMP2067LVT-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.2A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.16 EUR |
| 75000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP2067LVT-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4.2A TSOT26, Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP2067LVT-7 nach Preis ab 0.15 EUR bis 0.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMP2067LVT-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
auf Bestellung 1455 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
DMP2067LVT-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 4.2A TSOT26 Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Drain to Source Voltage (Vdss): 20 V |
auf Bestellung 231442 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP2067LVT-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V
MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 1455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.53 EUR |
| 100+ | 0.29 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.18 EUR |
| 9000+ | 0.16 EUR |
| 24000+ | 0.15 EUR |
| DMP2067LVT-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.2A TSOT26
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Description: MOSFET P-CH 20V 4.2A TSOT26
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
auf Bestellung 231442 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 33+ | 0.55 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.21 EUR |