DMP2070U-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V
auf Bestellung 828 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 26+ | 0.69 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
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Technische Details DMP2070U-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V, Power Dissipation (Max): 830mW, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V.
Weitere Produktangebote DMP2070U-7 nach Preis ab 0.25 EUR bis 1.14 EUR
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DMP2070U-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V~24V SOT23 T&R 3K |
auf Bestellung 4898 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2070U-7 | Hersteller : Diodes Inc |
MOSFET BVDSS: 8V24V SOT23 T&R 3K |
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DMP2070U-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -20A; 1.4W; SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -20V Drain current: -3.7A Gate charge: 17.8nC On-state resistance: 74mΩ Power dissipation: 1.4W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
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DMP2070U-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V Power Dissipation (Max): 830mW Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V |
Produkt ist nicht verfügbar |
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DMP2070U-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -20A; 1.4W; SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: SOT23 Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -20V Drain current: -3.7A Gate charge: 17.8nC On-state resistance: 74mΩ Power dissipation: 1.4W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |