| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.06 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.25 EUR |
| 5000+ | 0.23 EUR |
| 10000+ | 0.19 EUR |
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Technische Details DMP2077UCA3-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4A X4-DSN1006-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V, Power Dissipation (Max): 660mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X4-DSN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.34 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V.
Weitere Produktangebote DMP2077UCA3-7 nach Preis ab 0.49 EUR bis 1.24 EUR
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DMP2077UCA3-7 | Diodes Incorporated |
 Description: MOSFET P-CH 20V 4A X4-DSN1006-3Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Power Dissipation (Max): 660mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X4-DSN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V |
auf Bestellung 5415 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP2077UCA3-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4A X4-DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Power Dissipation (Max): 660mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Description: MOSFET P-CH 20V 4A X4-DSN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Power Dissipation (Max): 660mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X4-DSN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
auf Bestellung 5415 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 28+ | 0.76 EUR |
| 34+ | 0.63 EUR |
| 50+ | 0.56 EUR |
| 100+ | 0.49 EUR |