| Anzahl | Preis |
|---|---|
| 2+ | 1.41 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.28 EUR |
| 2500+ | 0.25 EUR |
| 5000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP2079LCA3-7 Diodes Incorporated
Description: MOSFET P-CH 20V 3.4A X4DSN1006-3, Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): -12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Supplier Device Package: X4-DSN1006-3 (Type B), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 810mW.
Weitere Produktangebote DMP2079LCA3-7 nach Preis ab 0.16 EUR bis 0.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||
|---|---|---|---|---|---|---|---|
| DMP2079LCA3-7 | Diodes Incorporated |
 Description: MOSFET P-CH 20V 3.4A X4DSN1006-3Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Supplier Device Package: X4-DSN1006-3 (Type B) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 810mW |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP2079LCA3-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.4A X4DSN1006-3
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: X4-DSN1006-3 (Type B)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 810mW
Description: MOSFET P-CH 20V 3.4A X4DSN1006-3
Rds On (Max) @ Id, Vgs: 78mOhm @ 500mA, 8V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Supplier Device Package: X4-DSN1006-3 (Type B)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 810mW
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.16 EUR |