DMP2104V-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.1A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 16 V
Qualification: AEC-Q101
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Technische Details DMP2104V-7 Diodes Incorporated
Description: MOSFET P-CH 20V 2.1A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V, Power Dissipation (Max): 850mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 16 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP2104V-7 nach Preis ab 0.17 EUR bis 0.84 EUR
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DMP2104V-7 | Diodes Incorporated |
MOSFETs -20V -860mA |
auf Bestellung 3677 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2104V-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 2.1A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V Power Dissipation (Max): 850mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 16 V Qualification: AEC-Q101 |
auf Bestellung 10756 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP2104V-7 |
|
Hersteller: Diodes Incorporated
MOSFETs -20V -860mA
MOSFETs -20V -860mA
auf Bestellung 3677 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.77 EUR |
| 10+ | 0.48 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.17 EUR |
| DMP2104V-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 16 V
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 2.1A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Power Dissipation (Max): 850mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 10756 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.84 EUR |
| 34+ | 0.53 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |