DMP2109UVT-13 Diodes Incorporated

Description: MOSFET P-CH 20V 3.7A TSOT26, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), FET Type: P-Channel.