DMP2109UVT-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.7A TSOT26
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: TSOT-26
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
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Technische Details DMP2109UVT-7 Diodes Incorporated
Description: MOSFET P-CH 20V 3.7A TSOT26, Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: TSOT-26, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V.
Weitere Produktangebote DMP2109UVT-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
DMP2109UVT-7 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP2109UVT-7 |
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Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 8V-24V
MOSFET MOSFET BVDSS: 8V-24V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH

