Technische Details DMP2109UVTQ-13 Diodes Zetex
Description: MOSFET BVDSS: 8V~24V TSOT26 T&R, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP2109UVTQ-13
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DMP2109UVTQ-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V Qualification: AEC-Q101 |
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DMP2109UVTQ-13 | Hersteller : Diodes Incorporated |
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