DMP2110U-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 3.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
auf Bestellung 330000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
| 9000+ | 0.17 EUR |
| 75000+ | 0.14 EUR |
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Technische Details DMP2110U-7 Diodes Incorporated
Description: MOSFET P-CH 20V 3.5A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V.
Weitere Produktangebote DMP2110U-7 nach Preis ab 0.16 EUR bis 0.89 EUR
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DMP2110U-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 3.5A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V |
auf Bestellung 331559 Stücke: Lieferzeit 21-28 Tag (e) |
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DMP2110U-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V~24V SOT23 T&R 3K |
auf Bestellung 7452 Stücke: Lieferzeit 14-28 Tag (e) |
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DMP2110U-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 3.5A 3-Pin SOT-23 T/R |
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DMP2110U-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -15A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP2110U-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -15A; 1.2W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -15A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |