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DMP2110UFDBQ-7

DMP2110UFDBQ-7 Diodes Incorporated

DMP2110UFDBQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMP2110UFDBQ-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote DMP2110UFDBQ-7 nach Preis ab 0.14 EUR bis 0.94 EUR

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DMP2110UFDBQ-7 DMP2110UFDBQ-7 Hersteller : Diodes Incorporated DMP2110UFDBQ.pdf Description: MOSFET BVDSS: 8V~24V U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.58 EUR
100+0.3 EUR
500+0.27 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
DMP2110UFDBQ-7 Hersteller : Diodes Zetex dmp2110ufdbq.pdf P-Channel Enhancement Mode MOSFET Automotive AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
DMP2110UFDBQ-7 Hersteller : Diodes Incorporated DIOD_S_A0012955877_1-2513125.pdf MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K
auf Bestellung 2632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.94 EUR
10+0.58 EUR
100+0.29 EUR
1000+0.26 EUR
3000+0.19 EUR
9000+0.17 EUR
Mindestbestellmenge: 4
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DMP2110UFDBQ-7 Hersteller : Diodes Zetex dmp2110ufdbq.pdf P-Channel Enhancement Mode MOSFET Automotive AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH