DMP2130L-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.17 EUR |
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Technische Details DMP2130L-7 Diodes Incorporated
Description: MOSFET P-CH 20V 3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 75mOhm @ 3.5A, 4.5V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V.
Weitere Produktangebote DMP2130L-7 nach Preis ab 0.18 EUR bis 0.81 EUR
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DMP2130L-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A On-state resistance: 0.125Ω Power dissipation: 1.4W Gate-source voltage: ±10V Kind of package: 7 inch reel; tape |
auf Bestellung 997 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2130L-7 | Diodes Incorporated |
MOSFETs P-Channel 1.4W |
auf Bestellung 28779 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2130L-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V |
auf Bestellung 9480 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2130L-7 |
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Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Power dissipation: 1.4W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 1.4W; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
On-state resistance: 0.125Ω
Power dissipation: 1.4W
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
auf Bestellung 997 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 155+ | 0.46 EUR |
| 261+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| DMP2130L-7 |
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Hersteller: Diodes Incorporated
MOSFETs P-Channel 1.4W
MOSFETs P-Channel 1.4W
auf Bestellung 28779 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.8 EUR |
| 10+ | 0.54 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.18 EUR |
| DMP2130L-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V
Description: MOSFET P-CH 20V 3A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 16 V
auf Bestellung 9480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 32+ | 0.55 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |